Areas of Interest
The major goal of the research program is to study the initial nucleation of heteroepitaxial thin films. The approach is to determine the surface topography during growth, the atomic bonding configurations and the electronic states. This is accomplished with a series of in situ measurements which include scanning tunneling microscopy, LEED, Raman scattering and electron spectroscopies such as Auger and photoemission. In the past year we have established a UHV chamber for in situ measurements and Auger and LEED capabilities have been demonstrated. A unique STM system has been designed and constructed and has demonstrated both micron scale and atomic scale images of graphite surfaces. Two computer image systems are used to display the data immediately after acquisition. We have contributed to the upgrading of the Raman system. The sensitivity has been improved by a factor of 10 or more and a digital data system has been established.
Initial studies have focused on three groups of materials; metal-silicon interfaces, diamond film growth and GaAs on Si. The second two studies have involved obtaining samples from other groups and carrying out measurements and analysis at NCSU. The GaAs./Si study was initiated at a summer visit to Xerox PARC. The work in the lab has been carried out by four graduate students, three undergrads and a high school student.
Recent Publications
"XAFS Study of Some Titanium Silicon and Germanium Compounds,"
Japanese Journal of Applied Physics
32.
D.B. Aldrich, R.J. Nemanich and D.E. Sayers.
Proceedings from 7th International Conference on X-ray Absorption Fine Structure,
(1993). p. 725.
"X-ray Absorption Study of the Local Structure of Zr T hin Films on Si,"
Japanese Journal of Applied Physics
32.
Y. Dao, A.M. Edwards, R.J. Nemanich and D.E. Sayers.
Proceedings from 7th International Conference on X-ray Absorption Fine Structure,
(1993). p. 396.
"EXAFS Study of the Initial Interface Region Formed by Thin Zirconium Films on Silicon (III),"
Japanese Journal of Applied Physics
32.
A.M . Edwards, Y.Dao, R.J. Nemanich and D.E. Sayers.
Proceedings from 7th International Conference on X-ray Absorption Fine Structure,
(1993). p. 393.
"A Study of Surface and Subsurface Properties of Si (100) After Hydrogen Ion-Beam Exposure,"
MRS Symposia Proceedings: Surface Chemical Cleaning and Passication for Semiconductor Processing
315.
H.X. Liu, T.P. Schneider, J. Montgomery, Y.L. Chen, A. Buczkowski, F. Shimura, R.J. Nemanich and D. H. Maher.
edited by G. Higashi, E. Irene and T. Ohmi.
(1993). p. 231.
"Plasma Surface Interactions and Surface Properties for Remote H-Plasma Cleaning of Si(100),"
MRS Symposia Proceedings: Surface Chemical Cleaning and Passivation for Semiconductor Processing
315.
T.P. Schneider, J. Cho, Y.L. Chen, D.M. Maher and R.J. Nemanich.
edited by G. Higashi. E. Irene and T. Ohmi.
(1993). p. 197.
"Influence of Dry and Wet Cleaning on the Properties of Rapid Thermal Grown and Deposited Gate Dielectrics ,"
Journal of Electronic Materials
3.
22.
Xiaoli Xu, Richard T. Kuehn, Mehmet C.ztrk and Jimmie J. Wortman, Robert J. Nemanich, Gari S. Harris and Dennis M. Maher.
(1993). p. 335-339.
"Effects of surface hydrogen on metal-diamond interface properties,"
J. Appl. Phys.
2.
73.
T.T. Tachibana, J.T. Glass and R.J. Nemanich.
(1993). p. 835-842.
"Effects of Plasma Surface Preparation Processes on the Formation of SiO2-Si(100) Interfaces,"
Journal of Applied Physics, (submitted).
Jaewon Cho and R.J. Nemanich.
"A Free Electron Laser Photoemission Electron Microscope system (FEL-PEEM),"
Surface Rev. Lett.
5.
H. Ade, S. English, J. Hartman, R. F. Davis, R. J. Nemanich, V. N. Litvinenko, I. V. Pinayev, Y. Wu, J. M. J. Madey.
(1998). p. 1257-1268.
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